Search results for "Floating gate memorie"
showing 4 items of 4 documents
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories?
2009
Atmospheric neutrons can interact with the matter inside a microelectronic chip and generate ionizing particles, which in turn can change the state of one or more memory bits [soft error (SE)]. In this letter, we show that SEs are possible in Flash memories, although with extremely low probabilities. While this problem will increase for future technologies, we do not expect SEs to be the reliability limiting factor for further floating gate scaling.
Radiation tolerance of NROM embedded products
2010
Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for b…
Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions
2008
Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities in terms of pattern dependence and annealing. We also illustrate single event functional interruptions, which lead to errors during erase and program operations. To account for all the phenomena we observe during and after irradiation, we propose an ldquoeffective cross section,rdquo which takes into account the array and peripheral circuitry contributions to the SEU sensitivity, as well as the operating conditions.
Direct evidence of secondary recoiled nuclei from high energy protons
2008
The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of nuclear reactions, in particular of those with tungsten, a quantitative model based on Monte Carlo and device-level simulations cannot describe the observed results in terms of recoils from proton-W reactions. © 2006 IEEE.